Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same

Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings extending through the alternating stack, and memory opening fill structures located in the memory openings and containing a respective vertical semiconductor channel and a respective memory film. Each of the electrically conductive layers includes a tubular metallic liner in contact with a respective outer sidewall segment of a respective one of the memory opening fill structures, an electrically conductive barrier layer contacting the respective tubular metallic liner and two of the insulating layers, and a metallic fill material layer contacting the electrically conductive barrier layer, and not contacting the tubular metallic liner or any of the insulating layers. The memory opening fill structures are formed after performing a halogen outgassing anneal through the memory openings to reduce or eliminate the halogen outgassing damage in the layers of the memory film.