The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2024

Filed:

Mar. 07, 2018
Applicant:

Technische Universität Braunschweig Körperschaft Des Öffentlichen Rechts, Braunschweig, DE;

Inventors:

Sönke Fündling, Braunschweig, DE;

Frederik Steib, Wolfsburg, DE;

Andreas Waag, Würzburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 27/153 (2013.01); H01L 33/0062 (2013.01); H01L 33/0075 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A semiconductor device for emitting electromagnetic radiation, and to a method of producing the same, which can be used as a semiconductor-based, structured light source. The semiconductor device comprises a layer stack structure composed of an n-doped layer, an active layer and a p-doped layer, as well as a connection structure comprising conductor layers and at least one insulator layer, the conductor layers being arranged, parallel to and spaced apart from one another, along a first direction that is parallel to the active layer of the layer stack structure, and at least one insulator layer being arranged between at least two conductor layers, one or more conductor layers being electrically connected to the p-doped layer of the layer stack structure.


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