The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Dec. 11, 2019
Method for manufacturing a detection structure with an optimised absorption rate, and said structure
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Abdelkader Aliane, Grenoble, FR;
Jean-Louis Ouvrier-Buffet, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); G01J 5/02 (2022.01); G01J 5/08 (2022.01); G01J 5/24 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); G01J 5/024 (2013.01); G01J 5/0853 (2013.01); G01J 5/24 (2013.01);
Abstract
A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.