The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
May. 05, 2022
Allegro Microsystems, Llc, Manchester, NH (US);
Sagar Saxena, Manchester, NH (US);
Washington Lamar, Mont Vernon, NH (US);
Maxim Klebanov, Palm Coast, FL (US);
Chung C. Kuo, Manchester, NH (US);
Sebastian Courtney, Dracut, MA (US);
Sundar Chetlur, Frisco, TX (US);
Allegro MicroSystems, LLC, Manchester, NH (US);
Abstract
In one aspect, a diode includes a substrate having a first type dopant; a buried layer having a second type dopant and formed within the substrate; an epitaxial layer having the second type dopant and formed above the buried layer; and a plurality of regions having the first type dopant within the epitaxial layer. The plurality of regions includes a first region, a second region, and a third region. The diode also includes a base well having the first type dopant and located within the epitaxial layer and in contact with the third and fourth regions. In a reverse-bias mode, the diode is an electrostatic discharge (ESD) clamp and forms parasitic transistors comprising a first bipolar junction transistor (BJT), a second BJT and a third BJT.