The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2024

Filed:

Jun. 01, 2023
Applicant:

Hkc Corporation Limited, Shenzhen, CN;

Inventors:

Keming Yang, Shenzhen, CN;

Yizhen Xu, Shenzhen, CN;

Chunhui Ren, Shenzhen, CN;

Feng Jiang, Shenzhen, CN;

Liu He, Shenzhen, CN;

Qiang Leng, Shenzhen, CN;

Rongrong Li, Shenzhen, CN;

Assignee:

HKC CORPORATION LIMITED, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); G02F 1/136222 (2021.01); G02F 1/1368 (2013.01); H01L 29/41733 (2013.01); H01L 29/78696 (2013.01);
Abstract

Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.


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