The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Apr. 01, 2020
Hitachi Energy Ltd, Zürich, CH;
Tobias Wikstroem, Egliswil, CH;
Umamaheswara Vemulapati, Windisch, CH;
Thomas Stiasny, Wädenswil, CH;
Hitachi Energy Ltd, Zurich, CH;
Abstract
A power diode comprises a plurality of diode cells (). Each diode cell () comprises a first conductivity type first anode layer (), a first conductivity type second anode layer () having a lower doping concentration than the first anode layer () and being separated from an anode electrode layer () by the first anode layer (), a second conductivity type drift layer () forming a pn-junction with the second anode layer (), a second conductivity type cathode layer () being in direct contact with the cathode electrode layer (), and a cathode-side segmentation layer () being in direct contact with the cathode electrode layer (). A material of the cathode-side segmentation layer () is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (), is below 2·10cm, or a material of the cathode-side segmentation layer () is an insulating material. A horizontal cross-section through each diode cell () along a horizontal plane (K) comprises a first area where the horizontal plane (K) intersects the second anode layer () and a second area where the plane (K) intersects the drift layer ().