The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jun. 22, 2019
Applicants:
Kansas State University Research Foundation, Manhattan, KS (US);
Purdue Research Foundation, West Lafayette, IN (US);
Inventors:
Suprem R. Das, Manhattan, KS (US);
David B. Janes, West Lafayette, IN (US);
Jiseok Kwon, Lafayette, IN (US);
Assignees:
Kansas State University Research Foundation, Manhattan, KS (US);
Purdue Research Foundation, West Lafayette, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/43 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
H01L 29/435 (2013.01); H01L 21/02568 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7606 (2013.01);
Abstract
A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers.