The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Oct. 17, 2019
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Assignee:
HITACHI, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 22/34 (2013.01); H01L 29/1608 (2013.01); H01L 29/41725 (2013.01);
Abstract
Abnormal generation of heat of a power MOSFET is detected to improve the reliability of a semiconductor device. As its means, in a power MOSFET having a drain electrode on the side of a back surface of a semiconductor substrate and a source pad on the side of a main surface of the semiconductor substrate, two gate pads electrically connected to a gate pad connected to a gate electrode of the power MOSFET are formed on the side of the main surface of the semiconductor substrate. Further, there is provided a voltmeter connected in parallel with each of two current paths which connect the two gate pads and a gate driver.