The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Mar. 03, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Tomoya Inden, Mie, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A semiconductor device includes a substrate. A gate insulating film is formed on the surface of the substrate. A first gate electrode layer is formed on the gate insulating film. A second gate electrode layer is formed on the first gate electrode layer and electrically connected to the first gate electrode layer. A first contact extends through the second gate electrode layer to reach the first gate electrode layer. First and second impurity layers are formed on opposite sides of the first and second gate electrode layers.