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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11967490 B1

PDFFull Text
Date of Patent:
Apr. 23, 2024

Filed:

Sep. 23, 2022

Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Akihiro Sato, Toyama, JP;

Tsuyoshi Takeda, Toyama, JP;

Yukitomo Hirochi, Toyama, JP;

Assignee:

KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;

Attorney:

Volpe Koenig

Primary Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
C23C 16/509 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32568 (2013.01); C23C 16/4587 (2013.01); C23C 16/50 (2013.01); C23C 16/509 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01J 37/32834 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H05H 1/46 (2013.01); H01J 2237/327 (2013.01); H01J 2237/3323 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01);
Abstract

There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

Find Patent Forward Citations

Sato, Akihiro. (2024). Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device (U.S. Patent No. 11967490). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11967490

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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