The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Apr. 13, 2023
Qorvo Us, Inc., San Jose, CA (US);
Mickael Renault, San Jose, CA (US);
Jacques Marcel Muyango, Rocklin, CA (US);
Shibajyoti Ghosh Dastider, Roseville, CA (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
Methods of forming a microelectromechanical device are disclosed. In some embodiments, a first layer is deposited on a backplane having at least two electrodes. One or more electrical contacts over the first layer are formed. Forming the one or more electrical contacts includes: depositing a first ruthenium layer over the first layer, depositing a titanium nitride layer over the first ruthenium layer, depositing a second ruthenium layer over the titanium nitride layer, etching the second ruthenium layer with a first etchant, etching the titanium nitride layer with a second etchant different than the first etchant; and etching the first ruthenium layer with the first etchant. Additionally, a beam is formed above one or more electrical contacts, the beam being spaced from the one or more electrical contacts and a top electrode is formed above the beam. A seal layer above the beam to enclose the beam in a cavity.