The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

May. 13, 2022
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Hyo-June Kim, Seoul, KR;

Hyun-Seok Kang, Icheon, KR;

Chi-Ho Kim, Yongin, KR;

Jae-Geun Oh, Seoul, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); G11C 13/0004 (2013.01); H10B 63/00 (2023.02); H10N 70/021 (2023.02);
Abstract

An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.


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