The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Nov. 24, 2020
Applicant:

Vanguard International Semiconductor Singapore Pte. Ltd., Singapore, SG;

Inventors:

Jia Jie Xia, Singapore, SG;

Rakesh Kumar, Singapore, SG;

Minu Prabhachandran Nair, Singapore, SG;

Nagarajan Ranganathan, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/30 (2023.01); B81B 3/00 (2006.01); H04R 17/02 (2006.01); H10N 30/00 (2023.01); H10N 30/06 (2023.01); H10N 30/082 (2023.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
H10N 30/302 (2023.02); B81B 3/001 (2013.01); H04R 17/02 (2013.01); H10N 30/06 (2023.02); H10N 30/082 (2023.02); H10N 30/1051 (2023.02); H10N 30/308 (2023.02); H10N 30/877 (2023.02); H10N 30/883 (2023.02); B81B 2201/0257 (2013.01); H04R 31/00 (2013.01); H04R 2201/003 (2013.01); Y10T 29/42 (2015.01);
Abstract

A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.


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