The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Mar. 26, 2019
Applicant:

Sharp Kabushiki Kaisha, Osaka, JP;

Inventors:

Tohru Sonoda, Sakai, JP;

Takashi Ochi, Sakai, JP;

Jumpei Takahashi, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10K 50/844 (2023.01); H10K 59/121 (2023.01); H10K 59/65 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 59/12 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/844 (2023.02); H10K 59/121 (2023.02); H10K 59/65 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 59/1201 (2023.02); H10K 2102/311 (2023.02);
Abstract

According to an aspect of the disclosure, in a non-display region inside a display region, an oxide semiconductor layer is provided in an island shape, a first opening is provided in a first inorganic insulating film so as to expose the oxide semiconductor layer in the non-display region, a common functional layer is provided so as to extend from the display region to the non-display region, and a second opening is provided so as to expose the oxide semiconductor layer in the common functional layer, a peripheral end of the second opening being surrounded by a peripheral end of the first opening in a plan view.


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