The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Sep. 08, 2021
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Yun Seog Lee, Seoul, KR;
Hyunjoon Lee, Seoul, KR;
Assignee:
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G06N 3/063 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); G06N 3/063 (2013.01); H10B 63/34 (2023.02); H10N 70/24 (2023.02);
Abstract
Disclosed is a three-terminal electro-chemical memory cell with a vertical structure for neuromorphic computation, including a circumferential hole, first and second conductive electrode layers sequentially stacked along an outer surface of the circumferential hole, an electrolyte layer formed along an inner surface of the circumferential hole and connected to one end of each of the first and second conductive electrode layers, and a gate electrode disposed parallel to the electrolyte layer in an inner surface direction of the circumferential hole.