The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Jun. 09, 2021
University of Science and Technology Beijing, Beijing, CN;
UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING, Beijing, CN;
Abstract
In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO/MoSheterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS, includes a MoSchannel, a TiOmodification layer, a SiOdielectric layer, Au source/drain electrodes and a Si gate electrode, The TiOmodification layer is modified on the surface of the MoSchannel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS, depositing Ti on the channel surface, and natural oxidation.