The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jun. 28, 2019
Applicant:

Jingao Solar Co., Ltd., Hebei, CN;

Inventors:

Haipeng Yin, Jiangsu, CN;

Wei Shan, Jiangsu, CN;

Kun Tang, Jiangsu, CN;

Assignee:

JINGAO SOLAR CO., LTD., Xingtai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/068 (2012.01); H01L 31/0224 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
H01L 31/068 (2013.01); H01L 31/022425 (2013.01); H01L 31/036 (2013.01);
Abstract

The present disclosure relates to the technical field of solar cells, and relates to a crystalline silicon solar cell and a preparation method thereof, and a photovoltaic assembly. The crystalline silicon solar cell includes a crystalline silicon substrate, a passivation layer that is disposed on the crystalline silicon substrate and that is provided with through holes, a carrier collection layer that is disposed on the passivation layer, and electrodes that contact the carrier collection layer; the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. In the described crystalline silicon solar cell, through holes are provided on the passivation layer, and the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer.


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