The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
May. 25, 2021
Hyundai Mobis Co., Ltd., Seoul, KR;
Jeong Mok Ha, Yongin-si, KR;
Hyuk Woo, Yongin-si, KR;
Sin A Kim, Yongin-si, KR;
Tae Youp Kim, Yongin-si, KR;
Ju Hwan Lee, Yongin-si, KR;
Min Gi Kang, Yongin-si, KR;
Tae Yang Kim, Yongin-si, KR;
HYUNDAI MOBIS CO., LTD., Seoul, KR;
Abstract
A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.