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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11961875 B1

PDFFull Text
Date of Patent:
Apr. 16, 2024

Filed:

Jan. 19, 2023

Monolithic segmented led array architecture with islanded epitaxial growth

Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Ashish Tandon, Sunnyvale, CA (US);

Rajat Sharma, San Jose, CA (US);

Joseph Flemish, Palo Alto, CA (US);

Andrei Papou, San Jose, CA (US);

Wen Yu, Pleasanton, CA (US);

Erik William Young, San Jose, CA (US);

Yu-Chen Shen, San Jose, CA (US);

Luke Gordon, Santa Barbara, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

Vincent Wall

Int. Cl.
CPC ...
H01L 27/15 (2006.01); F21S 41/153 (2018.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/20 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/36 (2010.01); H01L 33/50 (2010.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); F21S 41/153 (2018.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); H01L 33/305 (2013.01); H01L 33/502 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01S 5/00 (2013.01); H01L 33/0093 (2020.05); H01L 33/08 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

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