The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Nov. 07, 2021
International Business Machines Corporation, Armonk, NY (US);
Effendi Leobandung, Stormville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A circuit for monitoring usage of an active field effect transistor (FET) includes the active FET and a reference FET, formed in a same structure as the active FET. The active FET and the reference FET both are pFET or both are nFET, and are stacked on each other at a common gate. The circuit also includes a differential current sense circuit (DCSC) and a plurality of switches for connecting terminals of the FETs to logic voltage, ground voltage, and/or the DCSC. The DCSC is configured to measure and compare currents through each of the active and reference FETs when a threshold voltage is applied to the common gate.