The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Oct. 14, 2019
Agency for Science, Technology and Research, Singapore, SG;
Shiyang Zhu, Singapore, SG;
Chih-Kuo Tseng, Singapore, SG;
Ting Hu, Singapore, SG;
Zhengji Xu, Singapore, SG;
Yuan Dong, Singapore, SG;
Alex Yuandong Gu, Singapore, SG;
Agency for Science, Technology and Research, Singapore, SG;
Abstract
Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.