The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Mar. 17, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Amir Kajbafvala, Chandler, AZ (US);

Yanfu Lu, Phoenix, AZ (US);

Robinson James, Phoenix, AZ (US);

Caleb Miskin, Mesa, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/48 (2006.01); C23C 16/24 (2006.01); C23C 16/30 (2006.01); C23C 16/52 (2006.01); G01J 5/00 (2022.01); G01K 7/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C23C 16/482 (2013.01); C23C 16/24 (2013.01); C23C 16/30 (2013.01); C23C 16/52 (2013.01); G01J 5/0007 (2013.01); G01K 7/10 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.


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