The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jul. 30, 2021
Applicants:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Sumitomo Electric Hardmetal Corp., Hyogo, JP;

Inventors:

Yuichiro Watanabe, Osaka, JP;

Katsumi Okamura, Osaka, JP;

Akito Ishii, Osaka, JP;

Yoshiki Asakawa, Hyogo, JP;

Akihiko Ueda, Hyogo, JP;

Satoru Kukino, Hyogo, JP;

Hisaya Hama, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23B 27/14 (2006.01); B22F 7/00 (2006.01); C22C 29/16 (2006.01);
U.S. Cl.
CPC ...
C22C 29/16 (2013.01); B22F 7/008 (2013.01); B23B 27/148 (2013.01); B22F 2207/01 (2013.01); B22F 2301/205 (2013.01); B22F 2302/205 (2013.01); B23B 2226/125 (2013.01);
Abstract

A cubic boron nitride sintered material comprises cubic boron nitride particles and a bonding material, wherein the bonding material comprises at least one first metallic element selected from the group consisting of titanium, zirconium, vanadium, niobium, hafnium, tantalum, chromium, rhenium, molybdenum, and tungsten; cobalt; and aluminum; the cubic boron nitride sintered material has a first interface region sandwiched between an interface between the cubic boron nitride particles and the bonding material, and a first virtual line passing through a point 10 nm apart from the interface to the bonding material side; and when an element that is present at the highest concentration among the first metallic elements in the first interface region is defined as a first element, an atomic concentration of the first element in the first interface region is higher than an atomic concentration of the first element in the bonding material excluding the first interface region.


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