The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Dec. 23, 2020
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;
Inventor:
Yongwei Wu, Guangdong, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/50 (2023.01); H10K 71/00 (2023.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 71/40 (2023.01); H10K 85/30 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 71/441 (2023.02); H10K 85/30 (2023.02);
Abstract
A perovskite light-emitting diode and a method of manufacturing the same are provided. The method includes steps of providing a substrate, disposing a first electrode layer, a hole transport layer, and a perovskite precursor liquid layer on the substrate, coating the perovskite precursor liquid layer with a first solvent, performing a first thermal process to form a perovskite prefabricated layer, coating the perovskite prefabricated layer with a second solvent, and performing a second thermal process to form a perovskite light-emitting layer.