The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

May. 29, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yasushi Nakayama, Tokyo, JP;

Yoshiko Tamada, Tokyo, JP;

Takayoshi Miki, Tokyo, JP;

Shota Morisaki, Tokyo, JP;

Yukio Nakashima, Tokyo, JP;

Kenta Uchida, Tokyo, JP;

Keisuke Kimura, Tokyo, JP;

Tomonobu Mihara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/14 (2006.01); H03K 17/04 (2006.01); H03K 17/0412 (2006.01); H03K 17/28 (2006.01); H02M 1/088 (2006.01);
U.S. Cl.
CPC ...
H03K 17/14 (2013.01); H03K 17/04 (2013.01); H03K 17/0412 (2013.01); H03K 17/28 (2013.01); H02M 1/088 (2013.01);
Abstract

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.


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