The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Jan. 24, 2022
Nanya Technology Corporation, New Taipei, TW;
Te-Yin Chen, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application discloses a method for fabricating a semiconductor device with an oxidized intervention layer. The method includes providing a substrate; forming a tunneling insulating layer over the substrate; forming a floating gate over the tunnel oxide layer; forming a dielectric layer over the floating gate; forming a control gate over the dielectric layer; and performing a lateral oxidation process over the substrate, wherein a process temperature of the lateral oxidation process is between about 300° C. and about 600° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile