The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Aug. 27, 2021
Sakai Display Products Corporation, Sakai, JP;
Yoshiaki Matsushima, Sakai, JP;
Shigeru Ishida, Sakai, JP;
Ryohei Takakura, Sakai, JP;
Satoru Utsugi, Sakai, JP;
Nobutake Nodera, Sakai, JP;
Takao Matsumoto, Sakai, JP;
Satoshi Michinaka, Sakai, JP;
SAKAI DISPLAY PRODUCTS CORPORATION, Sakai, JP;
Abstract
Provided are a thin film transistor, a display device, and a thin film transistor manufacturing method, in which variation in characteristics is small. The present invention is provided with: a gate electrode formed on a substrate; a gate insulation film formed so as to cover the gate electrode; a semiconductor layer which is formed on the upper side of the gate insulation film and which includes a polysilicon layer disposed, in a plan view, inside a region defined by the gate electrode; an etching stopper layer disposed on the upper side of the polysilicon layer; and a source electrode and a drain electrode provided on the semiconductor layer so as to be separated from each other, wherein the polysilicon layer has first and second regions which are not covered with the etching stopper layer, and a part of the source electrode exists above the first region and a part of the drain electrode exists above the second region.