The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Nov. 10, 2021
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Kentaro Nasu, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7808 (2013.01); H01L 27/0251 (2013.01); H01L 27/0255 (2013.01); H01L 29/16 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/866 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.