The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Feb. 23, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Namgyu Cho, Seoul, KR;
Minwoo Song, Seongnam-si, KR;
Ohseong Kwon, Hwaseong-si, KR;
Wandon Kim, Seongnam-si, KR;
Hyeokjun Son, Seoul, KR;
Jinkyu Jang, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes: an active fin disposed on a substrate; a gate structure overlapping the active fin; source/drain regions disposed on both sides of the gate structure and on the active fin; and contact structures respectively connected to the source/drain regions, wherein the gate structure includes: a pair of gate spacers spaced apart from each other to provide a trench; a first gate electrode disposed in the trench and extending along an upper surface and a lateral surface of the active fin; a second gate electrode disposed on the first gate electrode in the trench, wherein the first gate electrode is not disposed between the second gate electrode and the pair of gate spacers; and a gate insulating film disposed between the pair of gate spacers and interposed between the first gate electrode and the active fin.