The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Nov. 06, 2020
Applicants:

Nisshinbo Micro Devices Inc., Tokyo, JP;

University of Yamanashi, Kofu, JP;

Inventors:

Makoto Hashimoto, Fujimino, JP;

Koji Yano, Kofu, JP;

Naohiro Shimizu, Nagoya, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/06 (2006.01); H01L 29/732 (2006.01); H01L 29/739 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/732 (2013.01); H01L 29/7395 (2013.01); H01L 29/74 (2013.01); H01L 29/8083 (2013.01);
Abstract

A semiconductor device has a super junction structure and includes a first semiconductor layer of the second conductive type disposed on the first column region and the second column region, a second semiconductor layer of the first conductive type disposed on the first semiconductor layer, a first semiconductor region of the first conductive type that is electrically connected to the first electrode and is disposed in a surface layer portion of the second semiconductor layer to be separated from the first semiconductor layer, and a second semiconductor region of the second conductive type that is electrically connected to the second electrode and that is disposed at least in the surface layer portion of the second semiconductor layer to be separated from the first semiconductor region and is electrically connected to the first semiconductor layer.


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