The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Sep. 09, 2021
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Hsin-Hung Li, Hsinchu, TW;

Wei-Syun Wang, Hsinchu, TW;

Chih-Chiang Chen, Hsinchu, TW;

Yu-Cheng Shih, Hsinchu, TW;

Cheng-Chan Wang, Hsinchu, TW;

Chia-Hsin Chung, Hsinchu, TW;

Ming-Jui Wang, Hsinchu, TW;

Sheng-Ming Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.


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