The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Aug. 08, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Kazuki Nomoto, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01); H04N 25/60 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14636 (2013.01); H01L 27/14831 (2013.01); H04N 25/60 (2023.01);
Abstract

It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit. The solid-state image sensor further includes a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FO unit via the interlayer insulating film and including a back gate unit.


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