The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Aug. 20, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Takehiro Nakai, Yokkaichi Mie, JP;
Mizuki Tamura, Nagoya Aichi, JP;
Yumiko Yamashita, Yokkaichi Mie, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/02 (2006.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/76232 (2013.01); H10B 41/35 (2023.02); H10B 43/35 (2023.02); H01L 27/0207 (2013.01);
Abstract
A semiconductor storage device includes: a semiconductor substrate; a plurality of circuit regions; and an element isolation region having a trench shape formed between the circuit regions. In the element isolation region including a thermal oxide film and a silicon oxide film, a sub-trench is formed in a bottom corner portion, and the thermal oxide film covers at least an inner wall of the sub-trench.
Nakai, Takehiro. (2024). Semiconductor storage device (U.S. Patent No. 11955372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11955372
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile