The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Feb. 20, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Hanhong Chen, Milpitas, CA (US);
Kelvin Chan, San Ramon, CA (US);
Philip Allan Kraus, San Jose, CA (US);
Thai Cheng Chua, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes Nand one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N. In embodiments, the hydrogen-containing gas includes at least one of H(molecular hydrogen), NH(ammonia), NH(diazene), NH(hydrazine), and HN(hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.