The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Aug. 17, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Shunsuke Shimo, Yokohama, JP;

Kenji Todori, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01G 9/20 (2006.01); H10K 30/10 (2023.01); H10K 71/12 (2023.01);
U.S. Cl.
CPC ...
H01G 9/2045 (2013.01); H10K 30/10 (2023.02); H10K 71/12 (2023.02);
Abstract

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.


Find Patent Forward Citations

Loading…