The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Dec. 17, 2021
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Ha Young Song, Suwon-si, KR;

Jong Hoon Kim, Suwon-si, KR;

Min Gon Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/005 (2006.01); H01G 4/232 (2006.01); H01G 4/248 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/005 (2013.01); H01G 4/2325 (2013.01); H01G 4/248 (2013.01); H01G 4/30 (2013.01);
Abstract

A capacitor component includes a body including a dielectric layer and internal electrode layers, with the dielectric layer interposed therebetween; and an external electrode disposed on the body and connected to the internal electrode layers. Each of the internal electrode layers has a capacitance formation portion disposed to overlap an adjacent internal electrode layer, and a lead-out portion extending from the capacitance formation portion and connected to the external electrode. A ratio (H2/H1) of a height difference H2 to a height difference H1 is 0.2 or less, where the height difference H2 is a height difference between the capacitance formation portion and the lead-out portion of a lowermost internal electrode layer the height difference H1 is a height difference between the capacitance formation portion and the lead-out portion of an uppermost internal electrode layer. An average thickness of the dielectric layer is 420 nm or less.


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