The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Apr. 19, 2021
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Takashi Sakurada, Itami, JP;
Tomohiro Kawase, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/42 (2006.01); C22F 1/16 (2006.01); C30B 11/00 (2006.01); C30B 33/00 (2006.01); C30B 33/02 (2006.01); H01B 1/02 (2006.01);
U.S. Cl.
CPC ...
H01B 1/02 (2013.01); C22F 1/16 (2013.01); C30B 11/00 (2013.01); C30B 29/42 (2013.01); C30B 33/00 (2013.01); C30B 33/02 (2013.01); Y10T 428/24355 (2015.01);
Abstract
An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10cm, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10cmor at least 1×10cm.