The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Jan. 28, 2022
Applicant:
Uif (University Industry Foundation), Yonsei University, Seoul, KR;
Inventors:
Seong Ook Jung, Seoul, KR;
Se Keon Kim, Seoul, KR;
Tae Woo Oh, Seoul, KR;
Se Hee Lim, Seoul, KR;
Dong Han Ko, Seoul, KR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 7/10 (2006.01); H03K 19/017 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 7/1039 (2013.01); G11C 11/2275 (2013.01); G11C 11/2297 (2013.01); H03K 19/01742 (2013.01); H03K 19/20 (2013.01);
Abstract
A nonvolatile memory device according to the embodiment includes: a first inverter; and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to each other, and a restore transistor having one electrode connected to the ferroelectric field effect transistor, and the second inverter stores data in a nonvolatile manner.