The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Oct. 08, 2021
Wuhan University, Hubei, CN;
WUHAN UNIVERSITY, Hubei, CN;
Abstract
A method and system for predicting an insulated gate bipolar transistor (IGBT) lifetime based on compound failure mode coupling are provided. First, a simultaneous failure probability model of a bonding wire and a solder layer is calculated. Next, expectancy of the simultaneous failure probability model is calculated and recorded as a lifetime under a coupling effect. A coupling function relation is established. A lifetime of the solder layer and a lifetime of the bonding wire are predicted. An IGBT lifetime prediction model not taking the coupling effect into account is established. An IGBT lifetime prediction model taking the coupling effect into account is established. In the disclosure, the lifetime of the IGBT module under the coupling effect of the solder layer and the bonding wire may be accurately predicted.