The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Apr. 08, 2019
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Ukyo Ikeda, Tokyo, JP;
Tetsuyoshi Ono, Tokyo, JP;
Hiroki Nakatsuchi, Tokyo, JP;
Masafumi Miyake, Tokyo, JP;
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/333 (2006.01); G01N 27/28 (2006.01); G01N 27/416 (2006.01); G06K 19/00 (2006.01); H01L 23/28 (2006.01);
U.S. Cl.
CPC ...
G01N 27/333 (2013.01); G01N 27/283 (2013.01); G01N 27/416 (2013.01); G06K 19/00 (2013.01); H01L 23/28 (2013.01);
Abstract
An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.