The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Nov. 02, 2020
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Motors Corporation, Seoul, KR;

Inventor:

Je Hwan Lee, Gyeonggi-do, KR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); G01K 13/00 (2021.01); H01L 23/473 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
G01K 7/015 (2013.01); G01K 13/00 (2013.01); G01K 2217/00 (2013.01); H01L 23/473 (2013.01); H01L 25/18 (2013.01);
Abstract

A method for estimating the junction temperature of the power semiconductor device of the power module is provided. The method includes computing a junction temperature prediction value of the first power semiconductor device based on a power loss and a thermal resistance of the first power semiconductor device and computing a junction temperature prediction value of the second power semiconductor device based on a power loss and a thermal resistance of the second power semiconductor device. A temperature prediction value of the heat sink is computed by subtracting the junction temperature prediction value of the first power semiconductor device from a sensing temperature sensed by the temperature sensor. The junction temperature of the second power semiconductor device is then finally determined by adding the temperature prediction value of the heat sink to the junction temperature prediction value of the second power semiconductor device.


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