The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Oct. 14, 2019
Method for manufacturing a single crystal by solution growth enabling trapping of parasitic crystals
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Bruno Pintault, Monts, FR;
Christian Belouet, Sceaux, FR;
Abstract
A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dinto the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dby introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dand d<d, which forms with the growth solution an interface located below the lower plate.