The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Jul. 13, 2020
Applicant:

Tokuyama Corporation, Yamaguchi, JP;

Inventor:

Masao Ariyuki, Yamaguchi, JP;

Assignee:

Tokuyama Corporation, Yamaguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C08J 7/06 (2006.01); C11D 7/08 (2006.01); C11D 7/26 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); C01B 21/072 (2006.01); C01F 7/00 (2022.01); C11D 3/37 (2006.01); C11D 7/06 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C08J 7/06 (2013.01); C11D 7/08 (2013.01); C11D 7/265 (2013.01); C23C 16/0227 (2013.01); C23C 16/34 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 29/68 (2013.01); C30B 33/10 (2013.01); H01L 21/02024 (2013.01); H01L 21/02052 (2013.01); H01L 21/0206 (2013.01); H01L 21/02096 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01); H01L 21/31053 (2013.01); C01B 21/072 (2013.01); C01F 7/00 (2013.01); C08J 2329/04 (2013.01); C08J 2367/00 (2013.01); C08J 2377/00 (2013.01); C08J 2379/04 (2013.01); C11D 3/37 (2013.01); C11D 7/06 (2013.01); C11D 2111/22 (2024.01); C22C 2200/00 (2013.01);
Abstract

A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.


Find Patent Forward Citations

Ariyuki, Masao. (2024). Laminate of aluminum nitride single-crystal substrate (U.S. Patent No. 11952677). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11952677

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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