The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Dec. 08, 2022
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Hidenari Yoshida, Toyama, JP;

Takeo Hanashima, Toyama, JP;

Hiroaki Hiramatsu, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45578 (2013.01); C23C 16/402 (2013.01); C23C 16/4412 (2013.01); C23C 16/45502 (2013.01); C23C 16/52 (2013.01); H01L 21/02123 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/67248 (2013.01);
Abstract

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.


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