The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Jul. 19, 2022
Canon Kabushiki Kaisha, Tokyo, JP;
Atsunori Terasaki, Kanagawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for producing a silicon substrate comprising a silicon base material; and a wiring formation layer laminated on a base material surface of the silicon base material, and being provided with a wiring member, an electrode member comprising a noble metal, and a close contact member comprising a base metal between the wiring member and the electrode member, wherein the method comprises a step of forming a deposition film by a fluorocarbon gas, in etching of the silicon substrate; and a removal step of removing, by a removal solution, the deposition film formed by the fluorocarbon gas; the removal solution comprises a primary amine and an organic polar solvent; a content of water in the removal solution is 10 mass % or lower; and a content of tetramethylammonium hydroxide in the removal solution is 1 mass % or lower.