The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Jan. 07, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ilmok Park, Seoul, KR;

Kyusul Park, Suwon-si, KR;

Daehwan Kang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/068 (2023.02); H10B 63/00 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02);
Abstract

A three-dimensional semiconductor memory device may include a first conductive line extending in a first direction, a second conductive line extending in a second direction crossing the first direction, a cell stack at an intersection of the first and second conductive lines, and a gapfill insulating pattern covering a side surface of the cell stack. The cell stack may include first, second, and third electrodes sequentially stacked, a switching pattern between the first and second electrodes, and a variable resistance pattern between the second and third electrodes. A top surface of the gapfill insulating pattern may be located between top and bottom surfaces of the third electrode.


Find Patent Forward Citations

Loading…