logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11950491 B1

PDFFull Text
Date of Patent:
Apr. 02, 2024

Filed:

Nov. 17, 2020

Semiconductor mixed material and application thereof

Applicant:

Raynergy Tek Incorporation, Hsinchu, TW;

Inventors:

Yi-Ming Chang, Hsinchu, TW;

Chuang-Yi Liao, Hsinchu, TW;

Wei-Long Li, Hsinchu, TW;

Yu-Tang Hsiao, Hsinchu, TW;

Chun-Chieh Lee, Hsinchu, TW;

Chia-Hua Li, Hsinchu, TW;

Huei-Shuan Tan, Hsinchu, TW;

Assignee:

RAYNERGY TEK INCORPORATION, Hsinchu, TW;

Attorney:

WPAT, P.C.

Primary Examiner:

Michael Y Sun

Int. Cl.
CPC ...
H10K 85/10 (2023.01); C07D 495/22 (2006.01); C08G 61/12 (2006.01); C08K 3/04 (2006.01); C08K 5/45 (2006.01); C08K 5/46 (2006.01); C08K 13/06 (2006.01); H10K 85/20 (2023.01); H10K 85/60 (2023.01); H10K 30/30 (2023.01);
U.S. Cl.
CPC ...
H10K 85/113 (2023.02); C07D 495/22 (2013.01); C08G 61/126 (2013.01); C08K 3/045 (2017.05); C08K 5/45 (2013.01); C08K 5/46 (2013.01); C08K 13/06 (2013.01); H10K 85/151 (2023.02); H10K 85/215 (2023.02); H10K 85/621 (2023.02); H10K 85/626 (2023.02); H10K 85/655 (2023.02); H10K 85/6576 (2023.02); C08G 2261/122 (2013.01); C08G 2261/124 (2013.01); C08G 2261/1412 (2013.01); C08G 2261/1424 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/3246 (2013.01); C08G 2261/3247 (2013.01); C08G 2261/514 (2013.01); C08K 2201/001 (2013.01); C08K 2201/011 (2013.01); H10K 30/30 (2023.02);
Abstract

A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, π-π*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Find Patent Forward Citations

Loading…