The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Feb. 20, 2019
Samsung Display Co., Ltd., Yongin-si, KR;
Yeonkeon Moon, Hwaseong-si, KR;
Joonseok Park, Yongin-si, KR;
Kwang-suk Kim, Suwon-si, KR;
Myounghwa Kim, Seoul, KR;
Taesang Kim, Seoul, KR;
Geunchul Park, Suwon-si, KR;
Kyungjin Jeon, Incheon, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.