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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11950447 B1

PDFFull Text
Date of Patent:
Apr. 02, 2024

Filed:

Nov. 27, 2019

Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Takeyoshi Watabe, Kanagawa, JP;

Airi Ueda, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Satoshi Seo, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Gregory D Clark

Int. Cl.
CPC ...
H01L 51/50 (2006.01); C09K 11/06 (2006.01); H10K 50/818 (2023.01); H10K 50/828 (2023.01); H10K 50/852 (2023.01); H10K 50/858 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/852 (2023.02); C09K 11/06 (2013.01); H10K 50/818 (2023.02); H10K 50/828 (2023.02); H10K 50/858 (2023.02); C09K 2211/1044 (2013.01); C09K 2211/185 (2013.01); H10K 85/342 (2023.02); H10K 85/615 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/636 (2023.02); H10K 85/6572 (2023.02); H10K 85/6576 (2023.02); H10K 2102/3026 (2023.02); H10K 2102/351 (2023.02);
Abstract

A novel light-emitting device with a microcavity structure which can improve the emission efficiency compared to the conventional one is provided. In a light-emitting device with a microcavity structure that emits light in a near-infrared range, reflectance of one or both of a first electrode (reflective electrode) and a second electrode (semi-transmissive and semi-reflective electrode) with respect to light in a near-infrared range (e.g., light with a wavelength of 850 nm) is higher than the reflectance thereof with respect to light in a visible light range (greater than or equal to 400 nm and less than 750 nm).

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