The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Mar. 19, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Hitoshi Kurusu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03F 1/52 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H03F 1/52 (2013.01); H03F 3/193 (2013.01); H03F 2200/294 (2013.01); H03F 2200/372 (2013.01);
Abstract

A semiconductor device () according to the present disclosure includes: an n-channel depletion-mode transistor (); an input matching circuit inside which the gate terminal () and the ground terminal () are DC-connected; a self-bias circuit () including a resistor () biasing the transistor () by a voltage drop due to a current flowing through the resistor (), and a capacitor () connected in parallel to the resistor) and regarded as short-circuit at a frequency of the high-frequency power; and a diode () having an endmost anode connected to the source terminal () and an endmost cathode connected to the ground terminal (), and connected in one stage or connected in series in a plurality of stages in the same direction.


Find Patent Forward Citations

Loading…